Reticle, semiconductor exposure apparatus and method, and semiconductor device manufacturing method

The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example. Specifically, the invention provides a reticle, a semiconductor exposure apparatus and method, and a semiconductor device manufacturing method, wherein a reticle used there includes a pattern region in which a circuit pattern is formed, a light blocking region of a width d formed at an outside periphery of the pattern region, and an anti-reflection film formed on a surface of the reticle remote from the pattern region, wherein the width d of the light blocking film satisfies a relation <math-cwu id="MATH-US-00001"> <NUMBER>1</NUMBER> <MATH> <MROW> <MI>d</MI> <MO></MO> <MROW> <MN>2</MN> <MO></MO> <MROW> <MI>t</MI> <MO></MO> <MI>tan</MI> </MROW> <MO></MO> <MROW> <MO>{</MO> <MROW> <MSUP> <MI>sin</MI> <MROW> <MO>-</MO> <MN>1</MN> </MROW> </MSUP> <MO></MO> <MROW> <MO>(</MO> <MROW> <MFRAC> <MSUB> <MI>n</MI> <MN>1</MN> </MSUB> <MSUB> <MI>n</MI> <MN>2</MN> </MSUB> </MFRAC> <MO></MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO></MO> <MI>sin</MI> <MO></MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO></MO> <MI>theta</MI> </MROW> <MO>)</MO> </MROW> </MROW> <MO>}</MO> </MROW> </MROW> </MROW> </MATH> <mathematica-file id="MATHEMATICA-00001" file="US20050042525A1-20050224-M00001.NB"/> <image id="EMI-M00001" wi="216.027" he="17.03835" file="US20050042525A1-20050224-M00001.TIF" imf="TIFF" ti="MF"/> </MATH-CWU> where n1 is a refractive index of a medium at a light entrance side of the reticle, n2 is a refractive index of the reticle, t is a thickness of the reticle, and theta is an incidence angle of light upon the reticle.